MOCVD GaN Process Development Engineer

United States·Dallasmid

OtherProcess Development Engineer

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Quick Summary

Key Responsibilities

Development of robust, low cost,

Technical Tools

OtherProcess Development Engineer

About the Role

~2 min read

Development of robust, low cost, manufacturable GaN unit processes and integration of such unit processes in support of GaN technology products
Direct hands-on process development in the fab from conception to qualification including unit process definition/ requirements for MOCVD GaN epitaxy, recipe development, materials/process characterization, metrology requirements and process control setup, operational and manufacturing specifications/documents, coordination of factory automation setup, and training materials creation
Development of process flow/integration requirements and specifications as required to meet electrical and process requirements
Design of experiments and statistical analysis of data
Direct engagement with material and equipment suppliers
Keeping up with latest understanding of wide-band gap materials fundamentals and improvements and ensuring competitiveness
Correlation/analysis of Device output electrical data to process/material input data and understanding to drive device performance/reliability and robustness improvements
Analysis and correlation of Process/Metrology output data to Equipment/Tool input data and understanding to drive manufacturability, cost, and robustness improvements
Matching performance between process tools and chambers running the same process recipe
Work with multiple equipment, process, integration, component, reliability, and Test & Product engineers to achieve these goals. The person performing this role must be capable of planning effectively, drive schedules, meet critical deadlines on multiple tasks in parallel, lead technical discussions in their area of expertise, and work effectively across organizational boundaries. They must be able to clearly communicate project status and actions. Additionally, they must be able to interface with multiple organizations and work well on a diverse team to accomplish goals

Requirements

~1 min read

Masters in Chemical Engineering, Materials Science, Chemistry, Physics or Electrical Engineering
3 years of experience with MOCVD GaN epitaxy growth and related Semiconductor Materials and Characterization/analysis
Knowledge of Semiconductor unit process development and loop integration
Knowledge/understanding of Semiconductor Manufacturing and Processes
Knowledge of GaN/Semiconductor Device physics
Strong knowledge of SPC methodology for process control and monitoring
Strong problem partitioning skills to resolve process and equipment issues
Demonstrated strong data analytics and problem-solving skills including knowledge/understanding of statistical design of experiments and analysis of large data sets

PhD in Chemical Engineering, Materials Science, Chemistry, Physics or Electrical Engineering
Knowledge of III-V HEMT Device physics, materials, and processing
Knowledge of Machine Learning and AI use is a plus
Experience in growing GaN epi for Power HEMTS and/or RF GaN
Strong verbal and written communication skills
Ability to work in teams and collaborate effectively with key stakeholders
Strong time management skills that enable on-time project/milestone delivery
Demonstrated ability to build strong, influential relationships
Ability to work effectively in a fast-paced, rapidly changing environment and able to quickly adjust to milestone/priority changes
Ability to take the initiative and drive for results