Staff Device Engineer

United StatesUnited States·San Joselead
OtherEngineer
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Quick Summary

Overview

Responsibilities Design and qualify high-voltage GaN power devices integrated in high performance and high reliability products (including automotive).

Technical Tools
OtherEngineer
Responsibilities
  • Design and qualify high-voltage GaN power devices integrated in high performance and high reliability products (including automotive).
  • Perform device/process simulations and device layout for GaN power devices.
  • Assignments will include power device creation, fabrication and full characterization, and issuing technical reports.
  • Evaluate electrical / thermal performance and reliability of GaN power devices.
  • Prior experience in Si power device development is a plus.
  • Interact with other departments for best use of Company’s technologies and to support key customer requirements.
 
Requirements
  • B. Sc degree in Electrical Engineering with 8 years’ working experience or
  • M. Sc degree in Electrical Engineering with 6 years’ working experience or
  • Ph. D degree in Electrical Engineering with 3 years’ working experience
  • Proven track record of independently designing and taking into volume production of high-voltage GaN power devices
  • Sound understanding of semiconductor device physics, especially WBG
  • Proficient in TCAD simulation and CADENCE layout tools
  • Hands-on experience with high-voltage testing and data acquisition systems
  • Strong communication and collaboration skills

Location & Eligibility

Where is the job
San Jose, United States
On-site at the office
Who can apply
US

Listing Details

Posted
April 7, 2026
First seen
September 26, 2026
Last seen
September 26, 2026

Posting Health

Days active
0
Repost count
0
Trust Level
12%
Scored at
September 26, 2026

Signal breakdown

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power-integrationsStaff Device Engineer