Wide Bandgap Process Integration Engineer NCG

This position is focused on leading the development, characterization and optimization of gallium nitride (GaN) power devices. As part of TI's Advanced Technology Development (ATD) team, the role involves close collaboration with fab/manufacturing, business units and Kilby Labs. This position requires in-depth knowledge of III-nitride materials, device physics, and reliability. The scope of the job includes, but not limited to:

• GaN device simulations (TCAD), device design, layout
• Develop robust process flows, drive design-of-experiment (DOE) execution, and solve complex integration challenges
• Collaboration with fab/manufacturing engineers to ensure device manufacturability
• Collaboration with reliability engineers to meet device reliability requirements
• Failure root-cause investigation for device/process/reliability/yield improvement

The ideal candidate is expected to have a strong understanding of the following:

• Power FETs and other relevant semiconductor device physics
• Typical analog silicon and GaN high electron mobility transistor (HEMT) process flows and the underlying process physics
• Electrical and materials characterization methodologies and statistical data analysis
• Strong hands-on lab experience and excellent problem solving skills are also needed
• Excellent verbal and written communication skills are a must as the position requires interfacing with multiple teams