Device Reliability Engineering Intern

Change the world. Love your job.
 

Become part of TI Advanced Technology Development organization that focuses on state-of-the-art semiconductor technology development.  We are looking for a highly motivated PhD student to work under supervision of our experienced technology development team. Your role involves modeling of CMOS transistor degradation mechanisms.   

Responsibilities may include, but are not limited to:

• Reliability characterization and modeling of MOS and BJT semiconductor devices across advanced TI digital, analog technology nodes
• Work with Keysight/Keithley parametric analyzer for precision DC measurements
• Interact closely with process integration and PDK team for development of BJT devices and model integration into design environment
• Leverage AI/ML tools for data analysis, model fitting, and generate automated workflows for model development 
• Develop reliability and safe operating area tools
• Familiarity with parametric analyzer instrument programming, MATLAB and SPICE simulations is desirable

Minimum Requirements:

• Currently pursuing PhD degree in Electrical Engineering or related degree

• Minimum Cumulative  3.0/4.0 GPA

Preferred Qualifications:

• Knowledge of semiconductor device characterization and modeling approaches
• Familiarity with Keysight / Keithley programming, MATLAB and SPICE simulations are desirable
• Knowledge of semiconductor device physics, reliability failure mechanisms, electro thermal device modeling
• Strong analytical and programming skills (C, MATLAB etc.)
• Strong verbal and written communication skills
• Ability to take the initiative and drive for results
• Strong time management skills that enable on-time project delivery