23h ago
New
$105,650.00-200,340.00 USD/yr

Memory Design Engineer

3 Locationsmid
EngineeringDesign Engineer
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Quick Summary

Key Responsibilities

Define, develop, and optimize advanced memory bitcells, array architectures, and peripheral circuits. Lead memory pathfinding and optimize power, performance,

Requirements Summary

Minimum Qualifications BA degree with 3 years of experience or Master's degree in Electrical Engineering, Computer Engineering,

Technical Tools
EngineeringDesign Engineer

The Advanced Design (AD) team is part of Intel’s larger Design Technology Platform (DTP) Organization and is focused on pathfinding and development of advanced memory technology.  These circuits enable best-in-class memory collateral, IP and innovative product design across all generations of Intel process technology.  At Intel, DTP is one of the key pillars enabling Intel to deliver winning products in the marketplace. Your work will directly enable Intel’s internal and external customers to get to the market faster with products that include high-performance, high-density, low-power memory at the leading edge of the technology curve and implemented in Intel’s advanced CMOS process technologies.  


In this position your responsibilities will include, but may not be limited to:


  • Define, develop, and optimize advanced memory bitcells, array architectures, and peripheral circuits.
  • Lead memory pathfinding and optimize power, performance, and area (PPA) through design-technology co-optimization (DTCO) and product design enablement.
  • Develop and validate memory libraries for PDK enablement across Intel's advanced process technologies.
  • Design memory arrays and IP, develop innovative memory circuits, and execute and validate test chips.

Your contributions will directly enable leading-edge products with high-performance, high-density, low-power memory implemented on Intel's advanced CMOS process technologies.

Requirements

~1 min read
  • BA degree with 3 years of experience or Master's degree in Electrical Engineering, Computer Engineering, or a related STEM field with 2+ years of experience OR a PhD with no experience.
  • Experience in customer circuit design, simulation, layout design and verification.
  • Hands-on experience with relevant industry EDA tools and flows for digital and/or analog design and verification, such as Cadence Virtuoso, Synopsys StarRC, and Synopsys HSPICE.

  • Experience in memory bitcell and circuit design.
  • Experience with advanced CMOS process technologies and device physics.
  • Experience evaluating and balancing power, performance, and area trade-offs.
  • Experience designing, characterizing, and verifying custom memory circuits, such as SRAM, register files, and ROM.
  • Experience optimizing the physical design of custom circuits.

          

College Grad

Shift 1 (United States of America)

US, Oregon, Hillsboro

US, California, Santa Clara, US, Texas, Austin

All qualified applicants will receive consideration for employment without regard to race, color, religion, religious creed, sex, national origin, ancestry, age, physical or mental disability, medical condition, genetic information, military and veteran status, marital status, pregnancy, gender, gender expression, gender identity, sexual orientation, or any other characteristic protected by local law, regulation, or ordinance.
N/A

What We Offer

~1 min read

We offer a total compensation package that ranks among the best in the industry. It consists of competitive pay, stock bonuses, and benefit programs which include health, retirement, and vacation. Find out more about the benefits of working at Intel.

 

 

Annual Salary Range for jobs which could be performed in the US: $105,650.00-200,340.00 USD

 

 

The range displayed on this job posting reflects the minimum and maximum target compensation for the position across all US locations. Within the range, individual pay is determined by work location and additional factors, including job-related skills, experience, and relevant education or training. Your recruiter can share more about the specific compensation range for your preferred location during the hiring process.

 

 

This role will be eligible for our hybrid work model which allows employees to split their time between working on-site at their assigned Intel site and off-site. * Job posting details (such as work model, location or time type) are subject to change.

*

ADDITIONAL INFORMATION: Intel is committed to Responsible Business Alliance (RBA) compliance and ethical hiring practices. We do not charge any fees during our hiring process. Candidates should never be required to pay recruitment fees, medical examination fees, or any other charges as a condition of employment. If you are asked to pay any fees during our hiring process, please report this immediately to your recruiter.

Location & Eligibility

Where is the job
Not specified
Location terms not specified
Who can apply
Same as job location

About this job

Pay per year
$105,650–$200,340 a year
6% above the $145,000 median for Design Engineer jobs on Jobera (585 salaries).
Posted
Today
Employer
has 1,465 open jobs on Jobera in 15 countries.

Listing Details

Posted
November 5, 2026
First seen
November 5, 2026
Last seen
November 5, 2026

Posting Health

Days active
0
Repost count
0
Trust Level
67%
Scored at
November 5, 2026

Signal breakdown

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Memory Design Engineer$105,650.00-200,340.00 USD